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| DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES * GaAs HJ-FET structure * High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm * High linear gain : GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm * High power added efficiency : 60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm 60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm 58 % TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm ORDERING INFORMATION Part Number NE651R479A-T1 Package 79A Supplying Form * 12 mm wide embossed taping * Qty 1 kpcs/reel Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order: NE651R479A). Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P13670EJ2V0DS00 (2nd edition) Date Published June 2000 NS CP(K) Printed in Japan The mark * shows major revised points. (c) 1998, 2000 NE651R479A ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IGF IGR Ptot Tch Tstg Ratings 8 -4 1.0 10 10 2.5 150 -65 to +150 Unit V V A mA mA W C C RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compression Channel Temperature Symbol VDS Gcomp Tch Test Conditions MIN. - - - TYP. 3.5 - - MAX. 5.5 5.0 Note Unit V dB C +110 Note Recommended maximum Gain Compression is 3.0 dB at VDS > 4.2 V ELECTRICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified, using NEC standard test fixture.) Parameter Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage Thermal Resistance Output Power Drain Current Power Added Efficiency Linear Gain Note 1 Symbol IDSS Vp BVgd Rth Pout ID Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 14 mA Igd = 14 mA Channel to Case f = 1.9 GHz, VDS = 3.5 V, Pin = +15 dBm, Rg = 1 k, IDset = 50 mA (RF OFF) Note 2 MIN. - -2.0 12 - 26.0 - 52 - TYP. 0.7 - - 30 27.0 220 60 12.0 MAX. - -0.4 - 50 - - - - Unit A V V C/W dBm mA % dB add GL Notes 1. Pin = 0 dBm 2. DC performance is 100 % testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2 Data Sheet P13670EJ2V0DS00 NE651R479A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TA = +25 C, unless otherwise specified, using NEC standard test fixture.) Parameter Output Power Drain Current Power Added Efficiency Linear Gain Note Symbol Pout ID Test Conditions f = 900 MHz, VDS = 3.5 V, Pin = +13 dBm, Rg = 1 k, IDset = 50 mA (RF OFF) MIN. - - - - TYP. 27.0 230 60 14.0 MAX. - - - - Unit dBm mA % dB add GL Note Pin = 0 dBm TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TA = +25 C, unless otherwise specified, using NEC standard test fixture.) Parameter Output Power Drain Current Power Added Efficiency Linear Gain Note Symbol Pout ID Test Conditions f = 1.9 GHz, VDS = 5.0 V, Pin = +15 dBm, Rg = 1 k, IDset = 50 mA (RF OFF) MIN. - - - - TYP. 29.5 350 58 12.0 MAX. - - - - Unit dBm mA % dB add GL Note Pin = 0 dBm TYPICAL CHARACTERISTICS (TA = +25 C) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 30 VDS = 3.5 V IDset = 50 mA (RF OFF) Rg = 1 k, f = 1.9 GHz Pout 20 300 500 Output Power Pout (dBm) 15 ID 200 10 100 5 -5 0 5 10 15 20 0 25 Input Power Pin (dBm) Remark The graph indicates nominal characteristics. Drain Current ID (mA) 25 400 Data Sheet P13670EJ2V0DS00 3 NE651R479A S-PARAMETERS Test Conditions: VDS = 3.5 V, IDset = 50 mA (RF OFF) Frequency GHz MAG. S11 ANG. (deg.) -168.8 -172.7 -176.9 -179.4 176.6 173.6 170.8 168.3 165.4 162.2 159.3 156.7 153.5 150.0 146.7 142.9 140.1 MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. S22 ANG. (deg.) -170.3 -173.9 -177.1 -179.6 178.0 175.5 173.4 171.9 170.1 167.8 165.9 163.8 161.1 158.4 156.0 154.0 149.6 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.868 0.866 0.864 0.863 0.868 0.862 0.860 0.861 0.859 0.861 0.862 0.857 0.855 0.856 0.860 0.860 0.863 6.120 5.225 4.641 4.145 3.730 3.359 3.152 2.894 2.695 2.527 2.387 2.261 2.229 2.093 1.946 1.884 1.785 96.9 95.0 93.0 91.6 89.4 88.3 87.5 85.8 85.2 84.2 82.9 82.8 80.9 77.8 76.9 75.5 73.6 0.046 0.046 0.045 0.045 0.045 0.045 0.046 0.047 0.047 0.046 0.046 0.047 0.046 0.046 0.045 0.045 0.045 15.7 14.9 14.8 15.4 15.8 16.6 16.6 15.7 15.5 16.1 17.0 17.1 17.0 16.6 16.3 16.9 18.4 0.536 0.537 0.541 0.540 0.541 0.542 0.542 0.535 0.533 0.533 0.533 0.532 0.537 0.538 0.537 0.533 0.533 4 Data Sheet P13670EJ2V0DS00 NE651R479A APPLICATION CIRCUIT EXAMPLE f = 1.9 GHz (Unit: mm) VGS Rg Tantalum Condenser 47 F 1 000 p Tantalum Condenser 100 F VDS /4 OPEN STUB 12 2 C1 6 3 INPUT 5 43 3 /4 LINE /4 OPEN STUB 5 6 3 52 2 7 2 8 12 50 LINE C2 OUTPUT f = 1.9 GHZ VDS = 3.5 V IDset = 50 mA (RF OFF) C1 = 30 pF C2 = 30 pF Rg = 1 k GND Substrate: Teflon glass ( r = 2.6) t = 0.8 mm APPLICATION CIRCUIT EXAMPLE f = 900 MHz (Unit: mm) VGS Rg Tantalum Condenser 47 F 1 000 p Tantalum Condenser 100 F VDS /4 OPEN STUB /4 OPEN STUB /4 LINE 50 LINE 2 5 C1 3 4 9 3 R1 R2 C3 4 4 3 2 10 C6 13 5 9 3 3 5 C2 C7 4 OUTPUT 4 INPUT 29 2 C4 C5 f = 900 MHZ VDS = 3.5 V IDset = 50 mA (RF OFF) C1 = 30 pF C2 = 30 pF C3 = 1 000 pF C4 = 6 pF C5 = 3 pF C6 = 6 pF C7 = 1 pF R1 = 5.1 R2 = 30 Rg = 1 k GND Substrate: Teflon glass ( r = 2.6) t = 0.8 mm Data Sheet P13670EJ2V0DS00 5 NE651R479A 79A PACKAGE DIMENSIONS (Unit: mm) BOTTOM VIEW 4.2 MAX. Source Source 1.50.2 H X Gate Drain Gate Drain 4.4 MAX. 5.7 MAX. T 8 0.80.15 1.0 MAX. 0.40.15 5.7 MAX. 3.60.2 0.8 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (Unit: mm) 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. 0.90.2 Drain 0.20.1 Gate 5.9 1.2 Source 0.5 0.5 through hole 0.2 x 33 0.5 6.1 6 Data Sheet P13670EJ2V0DS00 1.0 1.2 MAX. 0.60.15 NE651R479A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 C or below, Time: 30 seconds or less (at 210 C or higher), Count: 2 times or less, Note Exposure: limit: None Pin temperature: 260 C or below, Time: 5 seconds or less (per pin row) Note Exposure: limit: None Recommended Condition Symbol IR35-00-2 For soldering Partial Heating - Note After opening the dry pack, store it at 25 C or less and 65 % RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). Data Sheet P13670EJ2V0DS00 7 NE651R479A CAUTION The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. * The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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